Tehnička dokumentacija
Tehnički podaci
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
14 nC @ 4.5 V
Width
5mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Detalji o proizvodu
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 197,259
komad (isporučivo u Reel) (bez PDV-a)
RSD 236,711
komad (isporučivo u Reel) (s PDV-om)
5
RSD 197,259
komad (isporučivo u Reel) (bez PDV-a)
RSD 236,711
komad (isporučivo u Reel) (s PDV-om)
5
Kupujte na veliko
količina | Jedinična cena | Po kolut |
---|---|---|
5 - 45 | RSD 197,259 | RSD 986 |
50 - 95 | RSD 160,681 | RSD 803 |
100+ | RSD 128,022 | RSD 640 |
Tehnička dokumentacija
Tehnički podaci
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
14 nC @ 4.5 V
Width
5mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Detalji o proizvodu