N-Channel MOSFET, 157 A, 80 V, 8-Pin VSON-CLIP Texas Instruments CSD19502Q5BT
Tehnička dokumentacija
Tehnički podaci
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
157 A
Maximum Drain Source Voltage
80 V
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.3V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
195 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Height
1.05mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Detalji o proizvodu
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 529,071
komadno (u pakovanju od 2) (bez PDV-a)
RSD 634,885
komadno (u pakovanju od 2) (s PDV-om)
2
RSD 529,071
komadno (u pakovanju od 2) (bez PDV-a)
RSD 634,885
komadno (u pakovanju od 2) (s PDV-om)
2
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
2 - 8 | RSD 529,071 | RSD 1.058 |
10 - 18 | RSD 509,476 | RSD 1.019 |
20 - 48 | RSD 476,817 | RSD 954 |
50 - 98 | RSD 450,69 | RSD 901 |
100+ | RSD 444,159 | RSD 888 |
Tehnička dokumentacija
Tehnički podaci
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
157 A
Maximum Drain Source Voltage
80 V
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.3V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
195 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Height
1.05mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Detalji o proizvodu