Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
230 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
230 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
15.5 x 4.5 x 20mm
Zemlja podrijetla
China
Detalji o proizvodu
NPN Power Transistors, Toshiba
Bipolar Transistors, Toshiba
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 418,032
komadno (u pakovanju od 5) (bez PDV-a)
RSD 501,638
komadno (u pakovanju od 5) (s PDV-om)
5
RSD 418,032
komadno (u pakovanju od 5) (bez PDV-a)
RSD 501,638
komadno (u pakovanju od 5) (s PDV-om)
5
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
5 - 20 | RSD 418,032 | RSD 2.090 |
25 - 45 | RSD 320,056 | RSD 1.600 |
50 - 120 | RSD 300,46 | RSD 1.502 |
125+ | RSD 287,397 | RSD 1.437 |
Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
230 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
230 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
15.5 x 4.5 x 20mm
Zemlja podrijetla
China
Detalji o proizvodu