Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
60 V
Package Type
TSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
3.1mm
Forward Diode Voltage
1.2V
Height
0.85mm
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 73,156
komad (u Reel od 5000) (bez PDV-a)
RSD 87,787
komad (u Reel od 5000) (s PDV-om)
5000
RSD 73,156
komad (u Reel od 5000) (bez PDV-a)
RSD 87,787
komad (u Reel od 5000) (s PDV-om)
5000
Kupujte na veliko
količina | Jedinična cena | Po kolut |
---|---|---|
5000 - 5000 | RSD 73,156 | RSD 365.778 |
10000+ | RSD 69,236 | RSD 346.182 |
Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
60 V
Package Type
TSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
3.1mm
Forward Diode Voltage
1.2V
Height
0.85mm