Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
80 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
120
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
80 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10 x 4.5 x 15mm
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
Japan
Detalji o proizvodu
NPN Power Transistors, Toshiba
Bipolar Transistors, Toshiba
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 245,594
komadno (u pakovanju od 5) (bez PDV-a)
RSD 294,713
komadno (u pakovanju od 5) (s PDV-om)
5
RSD 245,594
komadno (u pakovanju od 5) (bez PDV-a)
RSD 294,713
komadno (u pakovanju od 5) (s PDV-om)
5
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
5 - 20 | RSD 245,594 | RSD 1.228 |
25+ | RSD 211,629 | RSD 1.058 |
Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
80 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
120
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
80 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10 x 4.5 x 15mm
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
Japan
Detalji o proizvodu