Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaTransistor Type
PNP
Maximum Continuous Collector Current
7 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
6 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
2 V
Maximum Collector Base Voltage
120 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
2µA
Height
15mm
Width
4.5mm
Maximum Power Dissipation
25 W @ 25 °C
Dimensions
10 x 4.5 x 15mm
Maximum Operating Temperature
+150 °C
Length
100mm
Base Current
0.7A
Zemlja podrijetla
Japan
Detalji o proizvodu
NPN Darlington Transistors, Toshiba
Bipolar Transistors, Toshiba
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 113,652
komadno (u pakovanju od 10) (bez PDV-a)
RSD 136,382
komadno (u pakovanju od 10) (s PDV-om)
10
RSD 113,652
komadno (u pakovanju od 10) (bez PDV-a)
RSD 136,382
komadno (u pakovanju od 10) (s PDV-om)
10
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
10 - 20 | RSD 113,652 | RSD 1.137 |
30+ | RSD 101,895 | RSD 1.019 |
Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaTransistor Type
PNP
Maximum Continuous Collector Current
7 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
6 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
2 V
Maximum Collector Base Voltage
120 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
2µA
Height
15mm
Width
4.5mm
Maximum Power Dissipation
25 W @ 25 °C
Dimensions
10 x 4.5 x 15mm
Maximum Operating Temperature
+150 °C
Length
100mm
Base Current
0.7A
Zemlja podrijetla
Japan
Detalji o proizvodu