Tehnička dokumentacija
Tehnički podaci
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
25 V
Series
TrenchFET
Package Type
1212
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
65.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Number of Elements per Chip
1
Width
3.15mm
Length
3.15mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.07mm
Zemlja podrijetla
China
Cena na upit
komadno (u pakovanju od 10) (bez PDV-a)
Standard
10
Cena na upit
komadno (u pakovanju od 10) (bez PDV-a)
Standard
10
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
Tehnička dokumentacija
Tehnički podaci
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
25 V
Series
TrenchFET
Package Type
1212
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
65.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Number of Elements per Chip
1
Width
3.15mm
Length
3.15mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.07mm
Zemlja podrijetla
China