Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.6 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
43 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.41mm
Width
4.7mm
Transistor Material
Si
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
9.01mm
Detalji o proizvodu
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 261,27
komad (isporucivo u Tubi) (bez PDV-a)
RSD 313,524
komad (isporucivo u Tubi) (s PDV-om)
10
RSD 261,27
komad (isporucivo u Tubi) (bez PDV-a)
RSD 313,524
komad (isporucivo u Tubi) (s PDV-om)
10
Kupujte na veliko
količina | Jedinična cena | Po cev |
---|---|---|
10 - 90 | RSD 261,27 | RSD 2.613 |
100 - 240 | RSD 199,871 | RSD 1.999 |
250 - 490 | RSD 172,438 | RSD 1.724 |
500 - 990 | RSD 159,375 | RSD 1.594 |
1000+ | RSD 120,184 | RSD 1.202 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.6 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
43 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.41mm
Width
4.7mm
Transistor Material
Si
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
9.01mm
Detalji o proizvodu