Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
18 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.41mm
Width
4.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.01mm
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 300,46
komad (isporucivo u Tubi) (bez PDV-a)
RSD 360,552
komad (isporucivo u Tubi) (s PDV-om)
10
RSD 300,46
komad (isporucivo u Tubi) (bez PDV-a)
RSD 360,552
komad (isporucivo u Tubi) (s PDV-om)
10
Kupujte na veliko
količina | Jedinična cena | Po cev |
---|---|---|
10 - 90 | RSD 300,46 | RSD 3.005 |
100 - 490 | RSD 267,802 | RSD 2.678 |
500+ | RSD 227,305 | RSD 2.273 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
18 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.41mm
Width
4.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.01mm
Zemlja podrijetla
China
Detalji o proizvodu