Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
200 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Width
6.29mm
Transistor Material
Si
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
3.37mm
Detalji o proizvodu
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 129
Each (bez PDV-a)
RSD 155
Each (s PDV-om)
1
RSD 129
Each (bez PDV-a)
RSD 155
Each (s PDV-om)
1
Kupujte na veliko
količina | Jedinična cena |
---|---|
1 - 9 | RSD 129 |
10 - 49 | RSD 120 |
50 - 99 | RSD 110 |
100 - 249 | RSD 107 |
250+ | RSD 103 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
200 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Width
6.29mm
Transistor Material
Si
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
3.37mm
Detalji o proizvodu