Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.5 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.83mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.63mm
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
16.12mm
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 101,895
komad (u Tubi od 50) (bez PDV-a)
RSD 122,274
komad (u Tubi od 50) (s PDV-om)
50
RSD 101,895
komad (u Tubi od 50) (bez PDV-a)
RSD 122,274
komad (u Tubi od 50) (s PDV-om)
50
Kupujte na veliko
količina | Jedinična cena | Po cev |
---|---|---|
50 - 450 | RSD 101,895 | RSD 5.095 |
500 - 1200 | RSD 96,67 | RSD 4.833 |
1250 - 2450 | RSD 91,444 | RSD 4.572 |
2500 - 4950 | RSD 90,138 | RSD 4.507 |
5000+ | RSD 87,525 | RSD 4.376 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.5 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.83mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.63mm
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
16.12mm
Zemlja podrijetla
China
Detalji o proizvodu