Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
16 nC @ 10 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.63mm
Width
4.83mm
Number of Elements per Chip
1
Height
16.12mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 92,751
komad (u Tubi od 50) (bez PDV-a)
RSD 111,301
komad (u Tubi od 50) (s PDV-om)
50
RSD 92,751
komad (u Tubi od 50) (bez PDV-a)
RSD 111,301
komad (u Tubi od 50) (s PDV-om)
50
Kupujte na veliko
količina | Jedinična cena | Po cev |
---|---|---|
50 - 50 | RSD 92,751 | RSD 4.638 |
100 - 200 | RSD 90,138 | RSD 4.507 |
250+ | RSD 88,832 | RSD 4.442 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
16 nC @ 10 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.63mm
Width
4.83mm
Number of Elements per Chip
1
Height
16.12mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu