Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Transistor Material
Si
Typical Gate Charge @ Vgs
16 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 320,056
komad (u Tubi od 50) (bez PDV-a)
RSD 384,067
komad (u Tubi od 50) (s PDV-om)
50
RSD 320,056
komad (u Tubi od 50) (bez PDV-a)
RSD 384,067
komad (u Tubi od 50) (s PDV-om)
50
Kupujte na veliko
količina | Jedinična cena | Po cev |
---|---|---|
50 - 50 | RSD 320,056 | RSD 16.003 |
100+ | RSD 306,992 | RSD 15.350 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Transistor Material
Si
Typical Gate Charge @ Vgs
16 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu