Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
6.22mm
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.38mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
2V
Zemlja podrijetla
Malaysia
Detalji o proizvodu
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 87,00
€ 0,87 komadno (isporučuje se u namotaju) (bez PDV-a)
€ 101,79
€ 1,018 komadno (isporučuje se u namotaju) (s PDV-om)
Proizvodno pakovanje (kolut)
100
€ 87,00
€ 0,87 komadno (isporučuje se u namotaju) (bez PDV-a)
€ 101,79
€ 1,018 komadno (isporučuje se u namotaju) (s PDV-om)
Proizvodno pakovanje (kolut)
100
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Provjerite ponovno kasnije.
količina | Jedinična cijena | Po kolut |
---|---|---|
100 - 240 | € 0,87 | € 8,70 |
250 - 490 | € 0,83 | € 8,30 |
500 - 990 | € 0,82 | € 8,20 |
1000+ | € 0,71 | € 7,10 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
6.22mm
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.38mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
2V
Zemlja podrijetla
Malaysia
Detalji o proizvodu