Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Transistor Material
Si
Width
6.22mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
2.39mm
Detalji o proizvodu
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 444
Each (bez PDV-a)
RSD 533
Each (s PDV-om)
1
RSD 444
Each (bez PDV-a)
RSD 533
Each (s PDV-om)
1
Kupujte na veliko
količina | Jedinična cena |
---|---|
1 - 9 | RSD 444 |
10 - 49 | RSD 385 |
50 - 99 | RSD 379 |
100 - 249 | RSD 372 |
250+ | RSD 359 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Transistor Material
Si
Width
6.22mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
2.39mm
Detalji o proizvodu