Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
190 mA, 300 mA
Maximum Drain Source Voltage
60 V
Package Type
SC-89-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
3 Ω, 8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
1.7mm
Typical Gate Charge @ Vgs
1700 nC @ 15 V, 750 nC @ 4.5 V
Width
1.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.6mm
Detalji o proizvodu
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 84,913
komad (isporučivo u Reel) (bez PDV-a)
RSD 101,896
komad (isporučivo u Reel) (s PDV-om)
20
RSD 84,913
komad (isporučivo u Reel) (bez PDV-a)
RSD 101,896
komad (isporučivo u Reel) (s PDV-om)
20
Kupujte na veliko
količina | Jedinična cena | Po kolut |
---|---|---|
20 - 180 | RSD 84,913 | RSD 1.698 |
200 - 480 | RSD 80,994 | RSD 1.620 |
500 - 980 | RSD 77,075 | RSD 1.541 |
1000 - 1980 | RSD 74,462 | RSD 1.489 |
2000+ | RSD 73,156 | RSD 1.463 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
190 mA, 300 mA
Maximum Drain Source Voltage
60 V
Package Type
SC-89-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
3 Ω, 8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
1.7mm
Typical Gate Charge @ Vgs
1700 nC @ 15 V, 750 nC @ 4.5 V
Width
1.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.6mm
Detalji o proizvodu