Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Typical Gate Charge @ Vgs
15.4 nC @ 10 V, 7.3 nC @ 4.5 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
1.5mm
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 137,167
komad (isporučivo u Reel) (bez PDV-a)
RSD 164,60
komad (isporučivo u Reel) (s PDV-om)
10
RSD 137,167
komad (isporučivo u Reel) (bez PDV-a)
RSD 164,60
komad (isporučivo u Reel) (s PDV-om)
10
Kupujte na veliko
količina | Jedinična cena | Po kolut |
---|---|---|
10 - 90 | RSD 137,167 | RSD 1.372 |
100 - 240 | RSD 130,635 | RSD 1.306 |
250 - 490 | RSD 122,797 | RSD 1.228 |
500 - 990 | RSD 120,184 | RSD 1.202 |
1000+ | RSD 117,571 | RSD 1.176 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Typical Gate Charge @ Vgs
15.4 nC @ 10 V, 7.3 nC @ 4.5 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
1.5mm
Zemlja podrijetla
China
Detalji o proizvodu