Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
49 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.55mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 176,357
komad (isporučivo u Reel) (bez PDV-a)
RSD 211,628
komad (isporučivo u Reel) (s PDV-om)
20
RSD 176,357
komad (isporučivo u Reel) (bez PDV-a)
RSD 211,628
komad (isporučivo u Reel) (s PDV-om)
20
Kupujte na veliko
količina | Jedinična cena | Po kolut |
---|---|---|
20 - 80 | RSD 176,357 | RSD 3.527 |
100 - 180 | RSD 143,698 | RSD 2.874 |
200 - 480 | RSD 142,392 | RSD 2.848 |
500 - 980 | RSD 139,779 | RSD 2.796 |
1000+ | RSD 137,167 | RSD 2.743 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
49 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.55mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu