Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.7 A, 6.8 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
42.5 mΩ, 62 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3 W, 3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
11.7 nC @ 10 V, 25 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.55mm
Zemlja podrijetla
China
Detalji o proizvodu
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 152,843
komadno (u pakovanju od 20) (bez PDV-a)
RSD 183,412
komadno (u pakovanju od 20) (s PDV-om)
20
RSD 152,843
komadno (u pakovanju od 20) (bez PDV-a)
RSD 183,412
komadno (u pakovanju od 20) (s PDV-om)
20
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
20 - 180 | RSD 152,843 | RSD 3.057 |
200 - 480 | RSD 118,878 | RSD 2.378 |
500 - 980 | RSD 104,508 | RSD 2.090 |
1000 - 1980 | RSD 100,589 | RSD 2.012 |
2000+ | RSD 87,525 | RSD 1.751 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.7 A, 6.8 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
42.5 mΩ, 62 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3 W, 3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
11.7 nC @ 10 V, 25 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.55mm
Zemlja podrijetla
China
Detalji o proizvodu