Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.8 A
Maximum Drain Source Voltage
20 V
Package Type
1206 ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
156 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
7 nC @ 5 V
Width
1.7mm
Minimum Operating Temperature
-55 °C
Height
1.1mm
Zemlja podrijetla
China
Detalji o proizvodu
Dual P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 99,283
komadno (u pakovanju od 20) (bez PDV-a)
RSD 119,14
komadno (u pakovanju od 20) (s PDV-om)
20
RSD 99,283
komadno (u pakovanju od 20) (bez PDV-a)
RSD 119,14
komadno (u pakovanju od 20) (s PDV-om)
20
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
20 - 180 | RSD 99,283 | RSD 1.986 |
200 - 480 | RSD 94,057 | RSD 1.881 |
500 - 980 | RSD 88,832 | RSD 1.777 |
1000 - 1980 | RSD 87,525 | RSD 1.751 |
2000+ | RSD 84,913 | RSD 1.698 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.8 A
Maximum Drain Source Voltage
20 V
Package Type
1206 ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
156 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
7 nC @ 5 V
Width
1.7mm
Minimum Operating Temperature
-55 °C
Height
1.1mm
Zemlja podrijetla
China
Detalji o proizvodu