N-Channel MOSFET, 40 A, 600 V, 3-Pin TO-220AB Vishay SIHP065N60E-GE3
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220AB
Series
E Series
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
10.51mm
Typical Gate Charge @ Vgs
49 nC @ 10 V
Width
4.65mm
Number of Elements per Chip
1
Height
15.49mm
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).
MOSFET Transistors, Vishay Semiconductor
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Proverite ponovno kasnije.
RSD 1.032,016
komad (u Tubi od 50) (bez PDV-a)
RSD 1.238,419
komad (u Tubi od 50) (s PDV-om)
50
RSD 1.032,016
komad (u Tubi od 50) (bez PDV-a)
RSD 1.238,419
komad (u Tubi od 50) (s PDV-om)
50
Kupujte na veliko
| količina | Jedinična cena | Po cev |
|---|---|---|
| 50 - 50 | RSD 1.032,016 | RSD 51.601 |
| 100+ | RSD 999,357 | RSD 49.968 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220AB
Series
E Series
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
10.51mm
Typical Gate Charge @ Vgs
49 nC @ 10 V
Width
4.65mm
Number of Elements per Chip
1
Height
15.49mm
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).
MOSFET Transistors, Vishay Semiconductor
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda