Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
150 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
69.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Length
6.25mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
1.12mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Detalji o proizvodu
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 267,802
komadno (u pakovanju od 5) (bez PDV-a)
RSD 321,362
komadno (u pakovanju od 5) (s PDV-om)
5
RSD 267,802
komadno (u pakovanju od 5) (bez PDV-a)
RSD 321,362
komadno (u pakovanju od 5) (s PDV-om)
5
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
5 - 45 | RSD 267,802 | RSD 1.339 |
50 - 120 | RSD 252,125 | RSD 1.261 |
125 - 245 | RSD 239,062 | RSD 1.195 |
250 - 495 | RSD 232,53 | RSD 1.163 |
500+ | RSD 227,305 | RSD 1.137 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
150 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
69.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Length
6.25mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
1.12mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Detalji o proizvodu