Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
24.2 A
Maximum Drain Source Voltage
250 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
67 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
25.3 nC @ 10 V
Length
6.25mm
Minimum Operating Temperature
-55 °C
Height
1.12mm
Forward Diode Voltage
1.1V
Detalji o proizvodu
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 339,651
komadno (u pakovanju od 5) (bez PDV-a)
RSD 407,581
komadno (u pakovanju od 5) (s PDV-om)
5
RSD 339,651
komadno (u pakovanju od 5) (bez PDV-a)
RSD 407,581
komadno (u pakovanju od 5) (s PDV-om)
5
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
5 - 45 | RSD 339,651 | RSD 1.698 |
50 - 120 | RSD 293,929 | RSD 1.470 |
125 - 245 | RSD 261,27 | RSD 1.306 |
250 - 495 | RSD 225,998 | RSD 1.130 |
500+ | RSD 185,502 | RSD 928 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
24.2 A
Maximum Drain Source Voltage
250 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
67 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
25.3 nC @ 10 V
Length
6.25mm
Minimum Operating Temperature
-55 °C
Height
1.12mm
Forward Diode Voltage
1.1V
Detalji o proizvodu