Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
126 nC @ 10 V
Length
10.51mm
Height
15.49mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Detalji o proizvodu
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 574,794
komadno (u pakovanju od 2) (bez PDV-a)
RSD 689,753
komadno (u pakovanju od 2) (s PDV-om)
2
RSD 574,794
komadno (u pakovanju od 2) (bez PDV-a)
RSD 689,753
komadno (u pakovanju od 2) (s PDV-om)
2
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
2 - 18 | RSD 574,794 | RSD 1.150 |
20 - 98 | RSD 548,667 | RSD 1.097 |
100 - 198 | RSD 516,008 | RSD 1.032 |
200 - 498 | RSD 509,476 | RSD 1.019 |
500+ | RSD 496,413 | RSD 993 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
126 nC @ 10 V
Length
10.51mm
Height
15.49mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Detalji o proizvodu