Tehnička dokumentacija
Tehnički podaci
Brand
VishayMounting Type
Panel Mount
Package Type
TO-244
Maximum Continuous Forward Current
244A
Peak Reverse Repetitive Voltage
400V
Diode Configuration
Common Cathode
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
3
Maximum Forward Voltage Drop
1.5V
Number of Elements per Chip
2
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
120ns
Peak Non-Repetitive Forward Surge Current
900A
Detalji o proizvodu
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Diodes and Rectifiers, Vishay Semiconductor
KM 1.290,44
KM 129,044 Each (In a Box of 10) (bez PDV-a)
KM 1.509,81
KM 150,981 Each (In a Box of 10) (s PDV-om)
10
KM 1.290,44
KM 129,044 Each (In a Box of 10) (bez PDV-a)
KM 1.509,81
KM 150,981 Each (In a Box of 10) (s PDV-om)
10
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
količina | Jedinična cijena | Po kutija |
---|---|---|
10 - 10 | KM 129,044 | KM 1.290,44 |
20+ | KM 124,35 | KM 1.243,50 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayMounting Type
Panel Mount
Package Type
TO-244
Maximum Continuous Forward Current
244A
Peak Reverse Repetitive Voltage
400V
Diode Configuration
Common Cathode
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
3
Maximum Forward Voltage Drop
1.5V
Number of Elements per Chip
2
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
120ns
Peak Non-Repetitive Forward Surge Current
900A
Detalji o proizvodu
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.