Tehnička dokumentacija
Tehnički podaci
Brand
VishayMounting Type
Through Hole
Package Type
TO-247AC
Maximum Continuous Forward Current
50A
Peak Reverse Repetitive Voltage
600V
Diode Configuration
Common Cathode
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
3
Maximum Forward Voltage Drop
2V
Number of Elements per Chip
2
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
75ns
Peak Non-Repetitive Forward Surge Current
225A
Detalji o proizvodu
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Diodes and Rectifiers, Vishay Semiconductor
RSD 29.556
RSD 1.182,246 komad (u Tubi od 25) (bez PDV-a)
RSD 35.467
RSD 1.418,695 komad (u Tubi od 25) (s PDV-om)
25
RSD 29.556
RSD 1.182,246 komad (u Tubi od 25) (bez PDV-a)
RSD 35.467
RSD 1.418,695 komad (u Tubi od 25) (s PDV-om)
25
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena | Po cev |
---|---|---|
25 - 25 | RSD 1.182,246 | RSD 29.556 |
50 - 100 | RSD 1.079,044 | RSD 26.976 |
125+ | RSD 1.062,062 | RSD 26.552 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayMounting Type
Through Hole
Package Type
TO-247AC
Maximum Continuous Forward Current
50A
Peak Reverse Repetitive Voltage
600V
Diode Configuration
Common Cathode
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
3
Maximum Forward Voltage Drop
2V
Number of Elements per Chip
2
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
75ns
Peak Non-Repetitive Forward Surge Current
225A
Detalji o proizvodu
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.