Tehnička dokumentacija
Tehnički podaci
Transistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Maximum Operating Frequency
60 Hz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.3 x 4.7 x 16mm
Maximum Collector Emitter Saturation Voltage
1 V
Zemlja podrijetla
China
Detalji o proizvodu
High Voltage Transistors, WeEn Semiconductors
Bipolar Transistors, WeEn Semiconductors
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 2.939
RSD 58,786 komadno (u pakovanju od 50) (bez PDV-a)
RSD 3.527
RSD 70,543 komadno (u pakovanju od 50) (s PDV-om)
Standard
50
RSD 2.939
RSD 58,786 komadno (u pakovanju od 50) (bez PDV-a)
RSD 3.527
RSD 70,543 komadno (u pakovanju od 50) (s PDV-om)
Standard
50
Tehnička dokumentacija
Tehnički podaci
Transistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Maximum Operating Frequency
60 Hz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.3 x 4.7 x 16mm
Maximum Collector Emitter Saturation Voltage
1 V
Zemlja podrijetla
China
Detalji o proizvodu