Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
3.5 nC @ 4.5V
Width
1.35mm
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Zemlja podrijetla
China
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Provjerite ponovno kasnije.
KM 778,64
KM 0,26 Each (On a Reel of 3000) (bez PDV-a)
KM 911,01
KM 0,304 Each (On a Reel of 3000) (s PDV-om)
3000
KM 778,64
KM 0,26 Each (On a Reel of 3000) (bez PDV-a)
KM 911,01
KM 0,304 Each (On a Reel of 3000) (s PDV-om)
3000
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
3.5 nC @ 4.5V
Width
1.35mm
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Zemlja podrijetla
China