N-Channel MOSFET, 17 A, 250 V, 3-Pin D2PAK Infineon IPB17N25S3100ATMA1

RS kataloški broj:: 165-5608brend: InfineonProizvođački broj:: IPB17N25S3100ATMA1
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Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

250 V

Series

OptiMOS™-T

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.25mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Height

4.4mm

Minimum Operating Temperature

-55 °C

Zemlja podrijetla

China

Detalji o proizvodu

Infineon OptiMOS™T Power MOSFETs

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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RSD 194,646

komad (u Reel od 1000) (bez PDV-a)

RSD 233,575

komad (u Reel od 1000) (s PDV-om)

N-Channel MOSFET, 17 A, 250 V, 3-Pin D2PAK Infineon IPB17N25S3100ATMA1

1000

Dostupno u više komada 1000
1000RSD 194.646
2000RSD 376.229
3000RSD 564.343
4000RSD 752.457
5000RSD 940.571
6000RSD 1.128.686
7000RSD 1.316.800
8000RSD 1.504.914
9000RSD 1.693.028
10000RSD 1.881.143
11000RSD 2.069.257
12000RSD 2.257.371
13000RSD 2.445.485
14000RSD 2.633.600
15000RSD 2.821.714

RSD 194,646

komad (u Reel od 1000) (bez PDV-a)

RSD 233,575

komad (u Reel od 1000) (s PDV-om)

N-Channel MOSFET, 17 A, 250 V, 3-Pin D2PAK Infineon IPB17N25S3100ATMA1
Informacije o stanju skladišta trenutno nisu dostupne.

1000

Dostupno u više komada 1000
1000RSD 194.646
2000RSD 376.229
3000RSD 564.343
4000RSD 752.457
5000RSD 940.571
6000RSD 1.128.686
7000RSD 1.316.800
8000RSD 1.504.914
9000RSD 1.693.028
10000RSD 1.881.143
11000RSD 2.069.257
12000RSD 2.257.371
13000RSD 2.445.485
14000RSD 2.633.600
15000RSD 2.821.714

Kupujte na veliko

količinaJedinična cenaPo kolut
1000 - 1000RSD 194,646RSD 194.646
2000+RSD 188,114RSD 188.114

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

250 V

Series

OptiMOS™-T

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.25mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Height

4.4mm

Minimum Operating Temperature

-55 °C

Zemlja podrijetla

China

Detalji o proizvodu

Infineon OptiMOS™T Power MOSFETs

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više