Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
80 V
Series
IPD053N08N3 G
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
52 nC @ 10 V
Width
7.36mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.41mm
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 224,692
komad (u Reel od 2500) (bez PDV-a)
RSD 269,63
komad (u Reel od 2500) (s PDV-om)
2500
RSD 224,692
komad (u Reel od 2500) (bez PDV-a)
RSD 269,63
komad (u Reel od 2500) (s PDV-om)
2500
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
80 V
Series
IPD053N08N3 G
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
52 nC @ 10 V
Width
7.36mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.41mm