Tehnička dokumentacija
Tehnički podaci
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Transistor Material
Si
Pin Count
3
Minimum Operating Temperature
-55 °C
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Configuration
Single
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
2V
Maximum Operating Temperature
+175 °C
Maximum Drain Source Voltage
100 V
Maximum Gate Threshold Voltage
4V
Series
HEXFET
Width
4.69mm
Package Type
TO-220AB
Length
10.54mm
Height
8.77mm
Maximum Power Dissipation
130 W
Maximum Continuous Drain Current
33 A
Brand
InfineonMaximum Drain Source Resistance
44 mΩ
Typical Gate Charge @ Vgs
71 nC @ 10 V
Zemlja podrijetla
China
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Proverite ponovno kasnije.
RSD 158,068
Each (In a Pack of 20) (bez PDV-a)
RSD 189,682
Each (In a Pack of 20) (s PDV-om)
Standard
20
RSD 158,068
Each (In a Pack of 20) (bez PDV-a)
RSD 189,682
Each (In a Pack of 20) (s PDV-om)
Standard
20
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
20 - 80 | RSD 158,068 | RSD 3.161 |
100 - 180 | RSD 125,41 | RSD 2.508 |
200 - 480 | RSD 122,797 | RSD 2.456 |
500 - 980 | RSD 118,878 | RSD 2.378 |
1000+ | RSD 113,652 | RSD 2.273 |
Tehnička dokumentacija
Tehnički podaci
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Transistor Material
Si
Pin Count
3
Minimum Operating Temperature
-55 °C
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Configuration
Single
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
2V
Maximum Operating Temperature
+175 °C
Maximum Drain Source Voltage
100 V
Maximum Gate Threshold Voltage
4V
Series
HEXFET
Width
4.69mm
Package Type
TO-220AB
Length
10.54mm
Height
8.77mm
Maximum Power Dissipation
130 W
Maximum Continuous Drain Current
33 A
Brand
InfineonMaximum Drain Source Resistance
44 mΩ
Typical Gate Charge @ Vgs
71 nC @ 10 V
Zemlja podrijetla
China