Tehnička dokumentacija
Tehnički podaci
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Pin Count
3
Minimum Operating Temperature
-55 °C
Transistor Configuration
Single
Forward Diode Voltage
1.4V
Mounting Type
Surface Mount
Minimum Gate Threshold Voltage
2.5V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
4.5V
Maximum Drain Source Voltage
250 V
Maximum Gate Source Voltage
±20 V
Series
HiperFET
Height
4.83mm
Length
10.41mm
Width
11.05mm
Maximum Continuous Drain Current
80 A
Maximum Power Dissipation
390 W
Brand
IXYSMaximum Drain Source Resistance
16 mΩ
Package Type
D2PAK (TO-263)
Typical Gate Charge @ Vgs
83 @ 10 V nC
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 1.829
Each (bez PDV-a)
RSD 2.195
Each (s PDV-om)
1
RSD 1.829
Each (bez PDV-a)
RSD 2.195
Each (s PDV-om)
1
Kupujte na veliko
količina | Jedinična cena |
---|---|
1 - 4 | RSD 1.829 |
5+ | RSD 1.568 |
Tehnička dokumentacija
Tehnički podaci
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Pin Count
3
Minimum Operating Temperature
-55 °C
Transistor Configuration
Single
Forward Diode Voltage
1.4V
Mounting Type
Surface Mount
Minimum Gate Threshold Voltage
2.5V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
4.5V
Maximum Drain Source Voltage
250 V
Maximum Gate Source Voltage
±20 V
Series
HiperFET
Height
4.83mm
Length
10.41mm
Width
11.05mm
Maximum Continuous Drain Current
80 A
Maximum Power Dissipation
390 W
Brand
IXYSMaximum Drain Source Resistance
16 mΩ
Package Type
D2PAK (TO-263)
Typical Gate Charge @ Vgs
83 @ 10 V nC