Tehnička dokumentacija
Tehnički podaci
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
150 mA
Maximum Drain Source Voltage
30 V
Package Type
CP
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
1.5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
1.58 nC @ 10 V
Height
1.1mm
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
P.O.A.
3000
P.O.A.
3000
Tehnička dokumentacija
Tehnički podaci
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
150 mA
Maximum Drain Source Voltage
30 V
Package Type
CP
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
1.5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
1.58 nC @ 10 V
Height
1.1mm
Zemlja podrijetla
China
Detalji o proizvodu