Tehnička dokumentacija
Tehnički podaci
Direction Type
Bi-Directional
Number of Elements per Chip
1
Pin Count
2
Minimum Operating Temperature
-55 °C
Test Current
1mA
Diode Configuration
Single
Diameter
5.6mm
Mounting Type
Through Hole
Maximum Peak Pulse Current
3.8A
Maximum Reverse Leakage Current
5µA
Maximum Operating Temperature
+175 °C
Peak Pulse Power Dissipation
1500W
Maximum Reverse Stand-off Voltage
256V
Minimum Breakdown Voltage
285V
Maximum Clamping Voltage
414V
Package Type
DO-201AE
Height
9.5mm
Dimensions
5.6 (Dia.) x 9.5mm
Brand
Taiwan SemiconductorInformacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
P.O.A.
1250
P.O.A.
1250
Tehnička dokumentacija
Tehnički podaci
Direction Type
Bi-Directional
Number of Elements per Chip
1
Pin Count
2
Minimum Operating Temperature
-55 °C
Test Current
1mA
Diode Configuration
Single
Diameter
5.6mm
Mounting Type
Through Hole
Maximum Peak Pulse Current
3.8A
Maximum Reverse Leakage Current
5µA
Maximum Operating Temperature
+175 °C
Peak Pulse Power Dissipation
1500W
Maximum Reverse Stand-off Voltage
256V
Minimum Breakdown Voltage
285V
Maximum Clamping Voltage
414V
Package Type
DO-201AE
Height
9.5mm
Dimensions
5.6 (Dia.) x 9.5mm
Brand
Taiwan Semiconductor