Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.13 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.05mm
Width
1.25mm
Minimum Operating Temperature
-55 °C
Height
0.9mm
Zemlja podrijetla
China
Detalji o proizvodu
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
P.O.A.
Standard
10
P.O.A.
Standard
10
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.13 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.05mm
Width
1.25mm
Minimum Operating Temperature
-55 °C
Height
0.9mm
Zemlja podrijetla
China
Detalji o proizvodu