Fuji Electric 7MBP75RA-120-55 3 Phase IGBT Module, 75 A 1200 V, 22-Pin P 610, PCB Mount

RS kataloški broj:: 716-5612robna marka: Fuji ElectricProizvođački broj:: 7MBP75RA-120-55
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Tehnička dokumentacija

Tehnički podaci

Proizvođač

Fuji Electric

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

1200 V

Maximum Power Dissipation

500 W

Package Type

P 610

Configuration

3 Phase

Mounting Type

PCB Mount

Channel Type

N

Pin Count

22

Transistor Configuration

3 Phase

Dimensions

109 x 88 x 22mm

Minimum Operating Temperature

-20 °C

Maximum Operating Temperature

+100 °C

Detalji o proizvodu

IGBT Discretes, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Fuji Electric 7MBP75RA-120-55 3 Phase IGBT Module, 75 A 1200 V, 22-Pin P 610, PCB Mount

P.O.A.

Fuji Electric 7MBP75RA-120-55 3 Phase IGBT Module, 75 A 1200 V, 22-Pin P 610, PCB Mount
Informacije o stanju skladišta trenutno nisu dostupne.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Proizvođač

Fuji Electric

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

1200 V

Maximum Power Dissipation

500 W

Package Type

P 610

Configuration

3 Phase

Mounting Type

PCB Mount

Channel Type

N

Pin Count

22

Transistor Configuration

3 Phase

Dimensions

109 x 88 x 22mm

Minimum Operating Temperature

-20 °C

Maximum Operating Temperature

+100 °C

Detalji o proizvodu

IGBT Discretes, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više