Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Width
9.65mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
4.83mm
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 29,60
€ 2,96 komadno (u pakiranju od 10) (bez PDV-a)
€ 37,00
€ 3,70 komadno (u pakiranju od 10) (s PDV-om)
Standard
10
€ 29,60
€ 2,96 komadno (u pakiranju od 10) (bez PDV-a)
€ 37,00
€ 3,70 komadno (u pakiranju od 10) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
10
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 10 - 10 | € 2,96 | € 29,60 |
| 20 - 40 | € 2,83 | € 28,30 |
| 50 - 90 | € 2,66 | € 26,60 |
| 100 - 240 | € 2,61 | € 26,10 |
| 250+ | € 2,54 | € 25,40 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Width
9.65mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
4.83mm
Zemlja podrijetla
China
Detalji o proizvodu


