Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Package Type
D2PAK (TO-263)
Series
MDmesh
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.75mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
46 nC @ 10 V
Width
10.4mm
Minimum Operating Temperature
-55 °C
Height
4.6mm
Detalji o proizvodu
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
KM 9,88
KM 9,88 Each (Supplied on a Reel) (bez PDV-a)
KM 11,56
KM 11,56 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
1
KM 9,88
KM 9,88 Each (Supplied on a Reel) (bez PDV-a)
KM 11,56
KM 11,56 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
1
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
količina | Jedinična cijena |
---|---|
1 - 9 | KM 9,88 |
10 - 99 | KM 9,58 |
100 - 499 | KM 8,90 |
500 - 999 | KM 8,12 |
1000+ | KM 7,33 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Package Type
D2PAK (TO-263)
Series
MDmesh
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.75mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
46 nC @ 10 V
Width
10.4mm
Minimum Operating Temperature
-55 °C
Height
4.6mm
Detalji o proizvodu