Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsConverter Function
FVC, VFC
Product Type
Voltage-to-Frequency Converter
Converter Type
Voltage
Full Scale Frequency
1kHz
Linearity Error
1 %FSR
Power Supply Type
Single
Maximum Supply Voltage
30V
Minimum Supply Voltage
4.5V
Mount Type
Surface
Package Type
SSOP
Pin Count
10
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
150°C
Standards/Approvals
No
Length
5mm
Height
1.5mm
Automotive Standard
No
Detalji o proizvodu
The device is a high voltage converter smartly integrating an 800 V avalanche-rugged power MOSFET with PWM current mode control. The power MOSFET with 800 V breakdown voltage allows the extended input voltage range to be applied, as well as the size of the DRAIN snubber circuit to be reduced. This IC meets the most stringent energy-saving standards as it has very low consumption and operates in pulse frequency modulation under light load.
Informacije o stanju skladišta trenutno nisu dostupne.
€ 8,60
€ 0,86 komadno (u pakiranju od 10) (bez PDV-a)
€ 10,75
€ 1,075 komadno (u pakiranju od 10) (s PDV-om)
Standard
10
€ 8,60
€ 0,86 komadno (u pakiranju od 10) (bez PDV-a)
€ 10,75
€ 1,075 komadno (u pakiranju od 10) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
10
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 10 - 40 | € 0,86 | € 8,60 |
| 50+ | € 0,83 | € 8,30 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsConverter Function
FVC, VFC
Product Type
Voltage-to-Frequency Converter
Converter Type
Voltage
Full Scale Frequency
1kHz
Linearity Error
1 %FSR
Power Supply Type
Single
Maximum Supply Voltage
30V
Minimum Supply Voltage
4.5V
Mount Type
Surface
Package Type
SSOP
Pin Count
10
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
150°C
Standards/Approvals
No
Length
5mm
Height
1.5mm
Automotive Standard
No
Detalji o proizvodu
The device is a high voltage converter smartly integrating an 800 V avalanche-rugged power MOSFET with PWM current mode control. The power MOSFET with 800 V breakdown voltage allows the extended input voltage range to be applied, as well as the size of the DRAIN snubber circuit to be reduced. This IC meets the most stringent energy-saving standards as it has very low consumption and operates in pulse frequency modulation under light load.