Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
3.9mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
117nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
4.8mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Informacije o stanju skladišta trenutno nisu dostupne.
€ 8,82
€ 4,41 komadno (u pakiranju od 2) (bez PDV-a)
€ 11,02
€ 5,512 komadno (u pakiranju od 2) (s PDV-om)
Standard
2
€ 8,82
€ 4,41 komadno (u pakiranju od 2) (bez PDV-a)
€ 11,02
€ 5,512 komadno (u pakiranju od 2) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
2
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 2 - 18 | € 4,41 | € 8,82 |
| 20 - 98 | € 3,93 | € 7,86 |
| 100 - 198 | € 3,66 | € 7,32 |
| 200+ | € 3,27 | € 6,54 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
3.9mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
117nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
4.8mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
