Microchip Half Bridge mSiC N-Channel SiC Power Module, 295 A, 3300 V Enhancement Mode MSCSM330DUM07D3NG

The Microchip silicon carbide power module designed for high-performance applications, delivering dual common source functionality with exceptional reliability under challenging conditions. This device effectively manages high voltage and current requirements.

• Kelvin source simplifies gate drive, enhancing performance
  
• Designed for high thermal performance with low junction-to-case thermal resistance
  
• RoHS compliant, ensuring environmental safety