Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
SiC Power Module
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
1200V
Package Type
ACEPACK 2
Series
A2F
Mount Type
Chassis
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-40°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Detalji o proizvodu
The STMicroelectronics is designed as power module in four pack topology integrates advanced silicon carbide power MOSFET technology. The module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate.
Informacije o stanju skladišta trenutno nisu dostupne.
€ 354,44
€ 354,44 komadno (bez PDV-a)
€ 443,05
€ 443,05 komadno (s PDV-om)
Standard
1
€ 354,44
€ 354,44 komadno (bez PDV-a)
€ 443,05
€ 443,05 komadno (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
1
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
SiC Power Module
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
1200V
Package Type
ACEPACK 2
Series
A2F
Mount Type
Chassis
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-40°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Detalji o proizvodu
The STMicroelectronics is designed as power module in four pack topology integrates advanced silicon carbide power MOSFET technology. The module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate.