Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5A
Maximum Drain Source Voltage Vds
40V
Package Type
PowerSO-10RF
Series
PD5
Mount Type
Surface
Pin Count
10
Maximum Drain Source Resistance Rds
0.75Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
73W
Minimum Operating Temperature
65°C
Maximum Gate Source Voltage Vgs
20V
Maximum Operating Temperature
165°C
Length
15.65mm
Height
3.6mm
Standards/Approvals
ECOPACK, JEDEC-approved, J-STD-020B, RoHS
Width
9.6mm
Automotive Standard
No
Zemlja podrijetla
Malaysia
Detalji o proizvodu
The STMicroelectronics are common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55015-E boasts the excellent gain, linearity and reliability thanks to STs latest LDMOS technology mounted in the first true SMD plastic RF power package, the PowerSO-10RF.
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€ 24,27
€ 24,27 komadno (bez PDV-a)
1
€ 24,27
€ 24,27 komadno (bez PDV-a)
Informacije o stanju skladišta trenutno nisu dostupne.
1
| količina | jedinična cijena |
|---|---|
| 1 - 9 | € 24,27 |
| 10+ | € 19,50 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
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Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5A
Maximum Drain Source Voltage Vds
40V
Package Type
PowerSO-10RF
Series
PD5
Mount Type
Surface
Pin Count
10
Maximum Drain Source Resistance Rds
0.75Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
73W
Minimum Operating Temperature
65°C
Maximum Gate Source Voltage Vgs
20V
Maximum Operating Temperature
165°C
Length
15.65mm
Height
3.6mm
Standards/Approvals
ECOPACK, JEDEC-approved, J-STD-020B, RoHS
Width
9.6mm
Automotive Standard
No
Zemlja podrijetla
Malaysia
Detalji o proizvodu
The STMicroelectronics are common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55015-E boasts the excellent gain, linearity and reliability thanks to STs latest LDMOS technology mounted in the first true SMD plastic RF power package, the PowerSO-10RF.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
