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STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
36A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCTW40N
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
700mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
278W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
13nC
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
3.3V
Maximum Operating Temperature
175°C
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics silicon carbide power MOSFET device has been developed using STs advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
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€ 674,40
€ 22,48 komadno (u cijevi od 30) (bez PDV-a)
30
€ 674,40
€ 22,48 komadno (u cijevi od 30) (bez PDV-a)
Informacije o stanju skladišta trenutno nisu dostupne.
30
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
36A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCTW40N
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
700mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
278W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
13nC
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
3.3V
Maximum Operating Temperature
175°C
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics silicon carbide power MOSFET device has been developed using STs advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
