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STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
73mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
94nC
Maximum Power Dissipation Pd
389W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
3V
Maximum Operating Temperature
200°C
Length
34.8mm
Height
5mm
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Detalji o proizvodu
The STMicroelectronics silicon carbide Power MOSFET device has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. It can be used in Switching mode power supply, DC-DC converters and Industrial motor control.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Informacije o stanju skladišta trenutno nisu dostupne.
€ 36,50
€ 36,50 Each (Supplied in a Tube) (bez PDV-a)
€ 45,62
€ 45,62 Each (Supplied in a Tube) (s PDV-om)
Proizvodno pakiranje (cijev)
1
€ 36,50
€ 36,50 Each (Supplied in a Tube) (bez PDV-a)
€ 45,62
€ 45,62 Each (Supplied in a Tube) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (cijev)
1
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
73mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
94nC
Maximum Power Dissipation Pd
389W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
3V
Maximum Operating Temperature
200°C
Length
34.8mm
Height
5mm
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Detalji o proizvodu
The STMicroelectronics silicon carbide Power MOSFET device has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. It can be used in Switching mode power supply, DC-DC converters and Industrial motor control.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
