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STMicroelectronicsProduct Type
MOSFET Modules
Channel Type
Type N
Maximum Continuous Drain Current Id
45A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.09Ω
Channel Mode
Depletion
Detalji o proizvodu
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
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Informacije o stanju skladišta trenutno nisu dostupne.
Cijena na upit
Standard
1
Cijena na upit
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
1
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET Modules
Channel Type
Type N
Maximum Continuous Drain Current Id
45A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.09Ω
Channel Mode
Depletion
Detalji o proizvodu
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
