Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
6A
Maximum Drain Source Voltage Vds
1.2kV
Series
MDmesh K5
Package Type
H2PAK-2
Mount Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance Rds
1.65Ω
Channel Mode
Enhancement Mode
Maximum Power Dissipation Pd
165W
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
30V
Maximum Operating Temperature
150°C
Length
10.98mm
Height
15.55mm
Width
10.98mm
Standards/Approvals
RoHS
Automotive Standard
AEC-Q101
Zemlja podrijetla
China
Detalji o proizvodu
The STMicroelectronics N channel power MOSFET delivers reliable High voltage performance for demanding applications, ensuring optimal efficiency and power density in automotive environments.
Informacije o stanju skladišta trenutno nisu dostupne.
€ 4.400,00
€ 4,40 Each (On a Reel of 1000) (bez PDV-a)
1000
€ 4.400,00
€ 4,40 Each (On a Reel of 1000) (bez PDV-a)
Informacije o stanju skladišta trenutno nisu dostupne.
1000
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
6A
Maximum Drain Source Voltage Vds
1.2kV
Series
MDmesh K5
Package Type
H2PAK-2
Mount Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance Rds
1.65Ω
Channel Mode
Enhancement Mode
Maximum Power Dissipation Pd
165W
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
30V
Maximum Operating Temperature
150°C
Length
10.98mm
Height
15.55mm
Width
10.98mm
Standards/Approvals
RoHS
Automotive Standard
AEC-Q101
Zemlja podrijetla
China
Detalji o proizvodu
The STMicroelectronics N channel power MOSFET delivers reliable High voltage performance for demanding applications, ensuring optimal efficiency and power density in automotive environments.