Tehnička dokumentacija
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Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-263
Series
STripFET F7
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
5.6mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
125W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
12.6nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
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PRIDRUŽITE SE BESPLATNO
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Informacije o stanju skladišta trenutno nisu dostupne.
€ 89,50
€ 1,79 Each (Supplied on a Reel) (bez PDV-a)
€ 111,88
€ 2,238 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakiranje (kolut)
50
€ 89,50
€ 1,79 Each (Supplied on a Reel) (bez PDV-a)
€ 111,88
€ 2,238 Each (Supplied on a Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (kolut)
50
| količina | jedinična cijena | Po kolut |
|---|---|---|
| 50 - 245 | € 1,79 | € 8,95 |
| 250 - 495 | € 1,42 | € 7,10 |
| 500+ | € 1,31 | € 6,55 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-263
Series
STripFET F7
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
5.6mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
125W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
12.6nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
