STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263

RS kataloški broj:: 166-0942robna marka: STMicroelectronicsProizvođački broj:: STB18N60DM2
brand-logo
Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Proizvođač

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

MDmesh DM2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

290mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

90W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

20nC

Maximum Operating Temperature

150°C

Length

9.35mm

Standards/Approvals

No

Width

10.4 mm

Height

4.6mm

Automotive Standard

No

Zemlja podrijetla

China

Detalji o proizvodu

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

MOSFET Transistors, STMicroelectronics

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Informacije o stanju skladišta trenutno nisu dostupne.

€ 2.340,00

€ 2,34 Each (On a Reel of 1000) (bez PDV-a)

€ 2.925,00

€ 2,925 Each (On a Reel of 1000) (s PDV-om)

STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263

€ 2.340,00

€ 2,34 Each (On a Reel of 1000) (bez PDV-a)

€ 2.925,00

€ 2,925 Each (On a Reel of 1000) (s PDV-om)

STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263

Informacije o stanju skladišta trenutno nisu dostupne.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Proizvođač

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

MDmesh DM2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

290mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

90W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

20nC

Maximum Operating Temperature

150°C

Length

9.35mm

Standards/Approvals

No

Width

10.4 mm

Height

4.6mm

Automotive Standard

No

Zemlja podrijetla

China

Detalji o proizvodu

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

MOSFET Transistors, STMicroelectronics

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više