STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 42 A, 710 V Enhancement, 3-Pin TO-263 STB57N65M5
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
42A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-263
Series
MDmesh M5
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
63mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
98nC
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
250W
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Standards/Approvals
No
Width
9.35 mm
Height
4.6mm
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
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€ 13,55
€ 13,55 komadno (bez PDV-a)
€ 16,94
€ 16,94 komadno (s PDV-om)
Standard
1
€ 13,55
€ 13,55 komadno (bez PDV-a)
€ 16,94
€ 16,94 komadno (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
1
| količina | jedinična cijena |
|---|---|
| 1 - 1 | € 13,55 |
| 2+ | € 13,06 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
42A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-263
Series
MDmesh M5
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
63mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
98nC
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
250W
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Standards/Approvals
No
Width
9.35 mm
Height
4.6mm
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda